1EDN7550BXTSA1 vs 2EDN7524GXTMA1 비교
다음의 상세 나란히 비교: 1EDN7550BXTSA1 제조: Infineon 및 2EDN7524GXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ 활성사양 비교
| 파라미터 | 1EDN7550BXTSA1 | 2EDN7524GXTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.59 | $0.82 |
| Driver Configuration | Single-channel, high-side / low-side | — |
| Input Type | Non-inverting, truly differential | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 8 A | — |
| Supply Voltage (VDD max) | 84 V | — |
| Minimum Input Pulse Width | 29 ns | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay value] | — |
| Input Common-Mode Range | Up to 150 V | — |
| Channel-to-Channel Matching | 1.0 ns typ. | — |
| Internal Regulator | 4.7 V on input side | — |
| Logic Input Compatibility | TTL / CMOS | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| 동작 접합 온도 | -40 °C to +150 °C | — |
| 패키지 | PG-SOT23-6 (SOT-23-6) | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS 상태 | Compliant | Compliant |
| Product Type | — | Low-side gate driver IC |
| Number of Channels | — | 2 (dual) |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | — | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | — | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| 상승 시간 | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| 하강 시간 | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| 동작 온도 | — | -40 C to +125 C |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |