2ED21834S06JXUMA1 vs IR2011SPBF Vergleich
Detaillierter Direktvergleich von 2ED21834S06JXUMA1 von Infineon und IR2011SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2ED21834S06JXUMA1 | IR2011SPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $1,18 |
| Product Type | Half-Bridge Gate Driver IC | Half-Bridge Gate Driver IC |
| Configuration | Half-bridge (high-side + low-side) | High-Side and Low-Side, Inverting |
| Maximum Offset Voltage (VBS) | 650 V | — |
| Typical Sink Current | 2.5 A | — |
| Typical Source Current | 2.5 A | — |
| Input Logic | Non-Inverting | — |
| Integrated Bootstrap Diode | Yes | — |
| Technology | SOI (Silicon-On-Insulator) high-voltage | — |
| Under-Voltage Lockout (UVLO) | Yes (VCC and VBS) | — |
| Gehäuse | PG-DSO-14-49 (DSO-14) | 8-SOIC (DSO-8) |
| Anzahl der Pins | 14 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -40 °C to +125 °C | -40 C to +125 C |
| RoHS-Status | Compliant | — |
| Standard Reel Quantity | 3000 | — |
| Anzahl der Ausgänge | — | 2 |
| Offset Voltage (High-Side, max) | — | 200 V |
| Gate Drive Supply Voltage (VCC, VBS) | — | 10 V to 20 V |
| Output Source/Sink Current | — | 1 A / 1 A (typ) |
| Propagation Delay (typ) | — | 80 ns |
| Rise / Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| Input Logic Compatibility | — | CMOS / LSTTL, down to 3.0 V |
| dV/dt Immunity | — | Yes |
| Negative Transient Tolerance | — | Yes (on VS pin) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Tube / Reel Packaging | — | Tube (per Infineon PBF convention) |