2ED21834S06JXUMA1 vs IR2011SPBF Comparison
Detailed side-by-side comparison of 2ED21834S06JXUMA1 by Infineon and IR2011SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon
2ED21834S06JXUMA1 ✓ Active
Specification Comparison
| Parameter | 2ED21834S06JXUMA1 | IR2011SPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Product Type | Half-Bridge Gate Driver IC | Half-Bridge Gate Driver IC |
| Configuration | Half-bridge (high-side + low-side) | High-Side and Low-Side, Inverting |
| Maximum Offset Voltage (VBS) | 650 V | — |
| Typical Sink Current | 2.5 A | — |
| Typical Source Current | 2.5 A | — |
| Input Logic | Non-Inverting | — |
| Integrated Bootstrap Diode | Yes | — |
| Technology | SOI (Silicon-On-Insulator) high-voltage | — |
| Under-Voltage Lockout (UVLO) | Yes (VCC and VBS) | — |
| Package | PG-DSO-14-49 (DSO-14) | 8-SOIC (DSO-8) |
| Number of Pins | 14 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -40 °C to +125 °C | -40 C to +125 C |
| RoHS Status | Compliant | — |
| Standard Reel Quantity | 3000 | — |
| Number of Outputs | — | 2 |
| Offset Voltage (High-Side, max) | — | 200 V |
| Gate Drive Supply Voltage (VCC, VBS) | — | 10 V to 20 V |
| Output Source/Sink Current | — | 1 A / 1 A (typ) |
| Propagation Delay (typ) | — | 80 ns |
| Rise / Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| Input Logic Compatibility | — | CMOS / LSTTL, down to 3.0 V |
| dV/dt Immunity | — | Yes |
| Negative Transient Tolerance | — | Yes (on VS pin) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Tube / Reel Packaging | — | Tube (per Infineon PBF convention) |