2ED2304S06FXUMA1 vs 2ED21064S06JXUMA1 Vergleich

Detaillierter Direktvergleich von 2ED2304S06FXUMA1 von Infineon und 2ED21064S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2ED2304S06FXUMA1 2ED21064S06JXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,66 $0,85
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Technology Infineon thin-film SOI —
Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) 3.3 V / 5 V CMOS
VCC Supply Range 10 V to 17 V —
Bootstrap Diode Integrated (BSD) Integrated
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) —
Interlock / Anti-Shoot-Through Built-in —
Propagation Delay (typ.) 200 ns —
Betriebstemperaturbereich -40C to +125C —
Gehäuse PG-DSO-8-910 (DSO-8) PG-DSO-14 (14-pin SOIC)
Montageart Surface Mount Surface Mount
MSL-Level 2 [DATA_NEEDED: MSL level]
RoHS-Status Compliant ROHS3 Compliant
Funktion — High-Side and Low-Side Gate Driver
Configuration — Half-Bridge (2 outputs, non-inverting)
Topologie — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Betriebstemperatur — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

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