2EDL8033G4BXTMA1 vs 2EDL8034G4CXTMA1 Vergleich

Detaillierter Direktvergleich von 2EDL8033G4BXTMA1 von Infineon und 2EDL8034G4CXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL8033G4BXTMA1 2EDL8034G4CXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,49 $1,55
Topologie Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) —
Isolation Type Junction-isolated (non-galvanic) Junction-isolated (level-shifted)
Input Logic Compatibility TTL 3.3 V / 5 V
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
Gehäuse PG-VDSON-8-5 PG-VDSON-10-2 (DSN-10) with exposed pad
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Marking Code 2ED8033G4B —
Driver Type — Half-Bridge (High-Side / Low-Side)
Configuration — Non-Inverting
Bootstrap Voltage (Max) — 120 V
Peak Source Current — 3 A
Peak Sink Current — 4 A
Anzahl der Ausgänge — 2
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
Betriebs-Sperrschichttemperatur — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)
MSL-Level — [DATA_NEEDED: MSL level]

Datenblätter & Ressourcen

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