2EDL8033G4BXTMA1 vs 2EDL8034G4CXTMA1 Comparação
Comparação detalhada lado a lado de 2EDL8033G4BXTMA1 por Infineon e 2EDL8034G4CXTMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | 2EDL8033G4BXTMA1 | 2EDL8034G4CXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,49 | $1,55 |
| Topologia | Half-bridge (high-side + low-side) | — |
| Maximum Bootstrap Voltage (VBS) | 120 V | — |
| Source Drive Current | 3 A | — |
| Sink Drive Current | 4 A | — |
| Number of Channels | 2 (HS + LS) | — |
| Isolation Type | Junction-isolated (non-galvanic) | Junction-isolated (level-shifted) |
| Input Logic Compatibility | TTL | 3.3 V / 5 V |
| Input Common-Mode Range | -10 V to 20 V | — |
| Input Type | Independent HS and LS | — |
| Integrated Dead-Time Control | Yes (programmable) | — |
| Under-Voltage Lockout (VCC/VDD) | Yes | — |
| Under-Voltage Lockout (VBS/High-Side) | Yes | — |
| Shoot-Through Protection | Yes | — |
| Encapsulamento | PG-VDSON-8-5 | PG-VDSON-10-2 (DSN-10) with exposed pad |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Marking Code | 2ED8033G4B | — |
| Driver Type | — | Half-Bridge (High-Side / Low-Side) |
| Configuration | — | Non-Inverting |
| Bootstrap Voltage (Max) | — | 120 V |
| Peak Source Current | — | 3 A |
| Peak Sink Current | — | 4 A |
| Número de saídas | — | 2 |
| Rise Time (Typical) | — | [DATA_NEEDED: rise time ns] |
| Fall Time (Typical) | — | [DATA_NEEDED: fall time ns] |
| Propagation Delay (Typical) | — | [DATA_NEEDED: propagation delay ns] |
| VCC Supply Voltage | — | [DATA_NEEDED: VCC range V] |
| UVLO Protection | — | Yes (VCC and VBS) |
| ESD Rating (HBM) | — | [DATA_NEEDED: ESD HBM kV] |
| Temperatura de junção de operação | — | -40 C to +125 C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |
| Nível MSL | — | [DATA_NEEDED: MSL level] |