2EDL8033G4BXTMA1 vs 2EDL8034G4CXTMA1 비교

다음의 상세 나란히 비교: 2EDL8033G4BXTMA1 제조: Infineon 및 2EDL8034G4CXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 활성

사양 비교

파라미터 2EDL8033G4BXTMA1 2EDL8034G4CXTMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.49 $1.55
토폴로지 Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) —
Isolation Type Junction-isolated (non-galvanic) Junction-isolated (level-shifted)
Input Logic Compatibility TTL 3.3 V / 5 V
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
패키지 PG-VDSON-8-5 PG-VDSON-10-2 (DSN-10) with exposed pad
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant —
Marking Code 2ED8033G4B —
Driver Type — Half-Bridge (High-Side / Low-Side)
Configuration — Non-Inverting
Bootstrap Voltage (Max) — 120 V
Peak Source Current — 3 A
Peak Sink Current — 4 A
출력 수 — 2
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
동작 접합 온도 — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)
MSL 레벨 — [DATA_NEEDED: MSL level]

데이터시트 & 자료

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