2EDL900G3XTMA1 vs 2EDL5023U2DXTMA1 Vergleich

Detaillierter Direktvergleich von 2EDL900G3XTMA1 von Infineon und 2EDL5023U2DXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL900G3XTMA1 2EDL5023U2DXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,20 $1,40
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V —
Number of Channels 2 (high-side + low-side) 1 (Half-Bridge)
Peak Source Current 4 A —
Peak Sink Current 6 A —
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) —
Gehäuse TSNP-16 (3x3 mm) with exposed pad PG-TSNP-12-5
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40 C to +125 C —
MSL-Level 1 —
RoHS-Status Compliant Compliant
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Driver Type — Non-Inverting
Anzahl der Ausgänge — 2
Bootstrap Voltage Rating — 120 V
Peak Gate Drive Current — 3 A (typical sink/source)
Input Logic — TTL-compatible
Input Voltage (VDD) — 5 V (gate drive supply)
Enable Pin (EN) — Active-High (logic high or left open enables)
PWM Inputs — HI (high-side), LI (low-side)
Ground Return — VSS
Betriebstemperatur — -40C to +125C (typical industrial range)
Tape and Reel Packaging — Yes

Datenblätter & Ressourcen

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