2EDL900G3XTMA1 vs 2EDL5023U2DXTMA1 对比

详细并排对比 2EDL900G3XTMA1 出自 Infineon 和 2EDL5023U2DXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 2EDL900G3XTMA1 2EDL5023U2DXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.20 $1.40
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V —
Number of Channels 2 (high-side + low-side) 1 (Half-Bridge)
Peak Source Current 4 A —
Peak Sink Current 6 A —
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) —
封装 TSNP-16 (3x3 mm) with exposed pad PG-TSNP-12-5
安装类型 Surface Mount Surface Mount
工作温度范围 -40 C to +125 C —
MSL 等级 1 —
RoHS 状态 Compliant Compliant
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Driver Type — Non-Inverting
输出数量 — 2
Bootstrap Voltage Rating — 120 V
Peak Gate Drive Current — 3 A (typical sink/source)
Input Logic — TTL-compatible
Input Voltage (VDD) — 5 V (gate drive supply)
Enable Pin (EN) — Active-High (logic high or left open enables)
PWM Inputs — HI (high-side), LI (low-side)
Ground Return — VSS
工作温度 — -40C to +125C (typical industrial range)
Tape and Reel Packaging — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价