2EDL900G3XTMA1 vs 2EDL6014ACG2DXTMA1 Vergleich

Detaillierter Direktvergleich von 2EDL900G3XTMA1 von Infineon und 2EDL6014ACG2DXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL900G3XTMA1 2EDL6014ACG2DXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,20 $1,18
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V Isolated (level-shifted floating high-side)
Number of Channels 2 (high-side + low-side) 2 (high-side + low-side)
Peak Source Current 4 A —
Peak Sink Current 6 A —
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) —
Gehäuse TSNP-16 (3x3 mm) with exposed pad 11-WQFN (2.2 x 2.2 mm) with exposed pad
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40 C to +125 C —
MSL-Level 1 —
RoHS-Status Compliant —
Driver Type — Half-Bridge Gate Driver
Ausgangskonfiguration — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Betriebstemperatur — -40 C to +125 C
Packing Method — Tape & Reel
Technology Family — EiceDRIVER 2EDL

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