2EDL900G3XTMA1 vs 2EDL6014ACG2DXTMA1 비교
다음의 상세 나란히 비교: 2EDL900G3XTMA1 제조: Infineon 및 2EDL6014ACG2DXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
2EDL6014ACG2DXTMA1 - 120V Half-Bridge Gate Driver, 4A/6A | Infineon
2EDL6014ACG2DXTMA1 ✓ 활성사양 비교
| 파라미터 | 2EDL900G3XTMA1 | 2EDL6014ACG2DXTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.20 | $1.18 |
| Product Type | Dual-channel level-shift gate driver IC | — |
| Topology Supported | Half-bridge, high-side, low-side | — |
| Isolation Type | Junction isolation (JI), 120 V | Isolated (level-shifted floating high-side) |
| Number of Channels | 2 (high-side + low-side) | 2 (high-side + low-side) |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Drive Output Voltage Range | 4 V to 16 V | — |
| Supply Voltage (VDD/VBS) | 4 V to 16 V | — |
| Switching Device Supported | Si MOSFET, enhancement-mode GaN FET | — |
| Configurable Deadtime | Yes (programmable) | — |
| Integrated Current Sense Amplifier | Yes | — |
| PWM Modes | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted | — |
| Input Logic Compatibility | 3.3 V / 5 V / TTL (per datasheet) | — |
| 패키지 | TSNP-16 (3x3 mm) with exposed pad | 11-WQFN (2.2 x 2.2 mm) with exposed pad |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -40 C to +125 C | — |
| MSL 레벨 | 1 | — |
| RoHS 상태 | Compliant | — |
| Driver Type | — | Half-Bridge Gate Driver |
| 출력 구성 | — | Non-Inverting |
| High-Side Voltage Rating | — | 120 V |
| Source Output Current | — | 4 A |
| Sink Output Current | — | 6 A |
| Supply Voltage (VDD) | — | 2.97 V to 5.5 V |
| Rise Time (typ.) | — | 4.2 ns |
| Fall Time (typ.) | — | 3.8 ns |
| 동작 온도 | — | -40 C to +125 C |
| Packing Method | — | Tape & Reel |
| Technology Family | — | EiceDRIVER 2EDL |