2EDL900G3XTMA1 vs 2EDL6014ACG2DXTMA1 Сравнение
Подробное сравнение бок о бок 2EDL900G3XTMA1 от Infineon и 2EDL6014ACG2DXTMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
2EDL900G3XTMA1 - 120V Dual Half-Bridge Gate Driver 4A/6A | Infineon
2EDL900G3XTMA1 ✓ АктивенInfineon
2EDL6014ACG2DXTMA1 - 120V Half-Bridge Gate Driver, 4A/6A | Infineon
2EDL6014ACG2DXTMA1 ✓ АктивенСравнение характеристик
| Параметр | 2EDL900G3XTMA1 | 2EDL6014ACG2DXTMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,20 | $1,18 |
| Product Type | Dual-channel level-shift gate driver IC | — |
| Topology Supported | Half-bridge, high-side, low-side | — |
| Isolation Type | Junction isolation (JI), 120 V | Isolated (level-shifted floating high-side) |
| Number of Channels | 2 (high-side + low-side) | 2 (high-side + low-side) |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Drive Output Voltage Range | 4 V to 16 V | — |
| Supply Voltage (VDD/VBS) | 4 V to 16 V | — |
| Switching Device Supported | Si MOSFET, enhancement-mode GaN FET | — |
| Configurable Deadtime | Yes (programmable) | — |
| Integrated Current Sense Amplifier | Yes | — |
| PWM Modes | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted | — |
| Input Logic Compatibility | 3.3 V / 5 V / TTL (per datasheet) | — |
| Корпус | TSNP-16 (3x3 mm) with exposed pad | 11-WQFN (2.2 x 2.2 mm) with exposed pad |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -40 C to +125 C | — |
| Уровень MSL | 1 | — |
| Статус RoHS | Compliant | — |
| Driver Type | — | Half-Bridge Gate Driver |
| Выходная конфигурация | — | Non-Inverting |
| High-Side Voltage Rating | — | 120 V |
| Source Output Current | — | 4 A |
| Sink Output Current | — | 6 A |
| Supply Voltage (VDD) | — | 2.97 V to 5.5 V |
| Rise Time (typ.) | — | 4.2 ns |
| Fall Time (typ.) | — | 3.8 ns |
| Рабочая температура | — | -40 C to +125 C |
| Packing Method | — | Tape & Reel |
| Technology Family | — | EiceDRIVER 2EDL |