2N7002-7-F vs MMBF170LT1 Vergleich
Detaillierter Direktvergleich von 2N7002-7-F von Diodes Incorporated und MMBF170LT1 von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ AktivSpezifikationsvergleich
| Parameter | 2N7002-7-F | MMBF170LT1 |
|---|---|---|
| Marke | Diodes Incorporated | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,08 | $0,09 |
| Transistortyp | N-Channel Enhancement-Mode MOSFET | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS max) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 115 mA | — |
| Continuous Drain Current Range (per Mouser listing) | 105 mA to 210 mA | — |
| Power Dissipation (PD) at Ta | 370 mW | — |
| On-Resistance RDS(on) | 7.5 ohm to 13.5 ohm | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gehäuse | SOT-23-3 (TO-236) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj / TA operating range] | -55 °C to +150 °C (TJ max per datasheet) |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge typical] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| RoHS-Status | Compliant | Compliant (per onsemi product page) |
| Terminal Finish | Matte tin (solderable per MIL-STD-202, method 208) | — |
| Channel Mode | Enhancement | — |
| Technology | Trench MOSFET | DMOS |
| Manufacturer | — | onsemi (ON Semiconductor) |
| Part Number | — | MMBF170LT1 |
| Drain-Source Voltage (VDSS) | — | 60 V |
| Drain-Gate Voltage (VDGS) | — | 60 Vdc |
| Gate-Source Voltage - Continuous (VGS) | — | ±20 Vdc (per datasheet) |
| Gate-Source Voltage - Non-repetitive (VGSM) | — | ±40 Vpk (tp <= 50 ms) |
| Continuous Drain Current (ID) | — | 500 mA (Ta) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Total Device Dissipation (PD) | — | 225 mW (Ta, FR-5 board) |
| Gehäuse / Bauform | — | SOT-23-3 (TO-236) |
| Pin-Anzahl | — | 3 |
| AEC-Q101 Qualified | — | Yes (per datasheet) |
| Polarity | — | N-Channel |