2N7002-7-F vs MMBF170LT1 Comparação
Comparação detalhada lado a lado de 2N7002-7-F por Diodes Incorporated e MMBF170LT1 por onsemi. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ AtivoComparação de especificações
| Parâmetro | 2N7002-7-F | MMBF170LT1 |
|---|---|---|
| Marca | Diodes Incorporated | onsemi |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,08 | $0,09 |
| Tipo de transistor | N-Channel Enhancement-Mode MOSFET | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS max) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 115 mA | — |
| Continuous Drain Current Range (per Mouser listing) | 105 mA to 210 mA | — |
| Power Dissipation (PD) at Ta | 370 mW | — |
| On-Resistance RDS(on) | 7.5 ohm to 13.5 ohm | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Encapsulamento | SOT-23-3 (TO-236) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | [DATA_NEEDED: Tj / TA operating range] | -55 °C to +150 °C (TJ max per datasheet) |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge typical] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Status RoHS | Compliant | Compliant (per onsemi product page) |
| Terminal Finish | Matte tin (solderable per MIL-STD-202, method 208) | — |
| Channel Mode | Enhancement | — |
| Technology | Trench MOSFET | DMOS |
| Manufacturer | — | onsemi (ON Semiconductor) |
| Part Number | — | MMBF170LT1 |
| Drain-Source Voltage (VDSS) | — | 60 V |
| Drain-Gate Voltage (VDGS) | — | 60 Vdc |
| Gate-Source Voltage - Continuous (VGS) | — | ±20 Vdc (per datasheet) |
| Gate-Source Voltage - Non-repetitive (VGSM) | — | ±40 Vpk (tp <= 50 ms) |
| Continuous Drain Current (ID) | — | 500 mA (Ta) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Total Device Dissipation (PD) | — | 225 mW (Ta, FR-5 board) |
| Encapsulamento / Caixa | — | SOT-23-3 (TO-236) |
| Contagem de pinos | — | 3 |
| AEC-Q101 Qualified | — | Yes (per datasheet) |
| Polarity | — | N-Channel |