2N7002-7-F vs MMBF170LT1 比較

詳細な並列比較: 2N7002-7-F メーカー: Diodes Incorporated および MMBF170LT1 メーカー: onsemi。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Diodes Incorporated
2N7002-7-F 2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F ✓ 生産中

仕様比較

パラメータ 2N7002-7-F MMBF170LT1
ブランド Diodes Incorporated onsemi
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.08 $0.09
トランジスタタイプ N-Channel Enhancement-Mode MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS max) 60 V —
Continuous Drain Current (ID) at Ta 115 mA —
Continuous Drain Current Range (per Mouser listing) 105 mA to 210 mA —
Power Dissipation (PD) at Ta 370 mW —
On-Resistance RDS(on) 7.5 ohm to 13.5 ohm —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
パッケージ SOT-23-3 (TO-236) —
実装タイプ Surface Mount Surface Mount
動作温度範囲 [DATA_NEEDED: Tj / TA operating range] -55 °C to +150 °C (TJ max per datasheet)
Gate Charge (Qg) [DATA_NEEDED: total gate charge typical] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
RoHS ステータス Compliant Compliant (per onsemi product page)
Terminal Finish Matte tin (solderable per MIL-STD-202, method 208) —
Channel Mode Enhancement —
Technology Trench MOSFET DMOS
Manufacturer — onsemi (ON Semiconductor)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Continuous Drain Current (ID) — 500 mA (Ta)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
パッケージ / ケース — SOT-23-3 (TO-236)
ピン数 — 3
AEC-Q101 Qualified — Yes (per datasheet)
Polarity — N-Channel

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