2N7002-7-F vs MMBF170LT1 对比

详细并排对比 2N7002-7-F 出自 Diodes Incorporated 和 MMBF170LT1 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Diodes Incorporated
2N7002-7-F 2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F ✓ 量产中

规格对比

参数 2N7002-7-F MMBF170LT1
品牌 Diodes Incorporated onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.08 $0.09
晶体管类型 N-Channel Enhancement-Mode MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS max) 60 V —
Continuous Drain Current (ID) at Ta 115 mA —
Continuous Drain Current Range (per Mouser listing) 105 mA to 210 mA —
Power Dissipation (PD) at Ta 370 mW —
On-Resistance RDS(on) 7.5 ohm to 13.5 ohm —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
封装 SOT-23-3 (TO-236) —
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: Tj / TA operating range] -55 °C to +150 °C (TJ max per datasheet)
Gate Charge (Qg) [DATA_NEEDED: total gate charge typical] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
RoHS 状态 Compliant Compliant (per onsemi product page)
Terminal Finish Matte tin (solderable per MIL-STD-202, method 208) —
Channel Mode Enhancement —
Technology Trench MOSFET DMOS
Manufacturer — onsemi (ON Semiconductor)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Continuous Drain Current (ID) — 500 mA (Ta)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
封装 / 外壳 — SOT-23-3 (TO-236)
引脚数量 — 3
AEC-Q101 Qualified — Yes (per datasheet)
Polarity — N-Channel

数据手册与资源

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