2N7002L vs BSS123IXTSA1 Vergleich
Detaillierter Direktvergleich von 2N7002L von onsemi und BSS123IXTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002L | BSS123IXTSA1 |
|---|---|---|
| Marke | onsemi | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,03 | $0,11 |
| Transistortyp | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) | 115 mA (Ta) | — |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | — |
| Technology | High cell density trench MOSFET | OptiMOS Small-Signal |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | SOT-23 (SOT-23-3) | PG-SOT-23-3 (SOT-23-3) |
| Configuration | Single FET | Single N-Channel |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Continuous Drain Current (ID) at TA=25C | — | 190 mA |
| Power Dissipation (PD) at TA=25C | — | 500 mW |
| RDS(on) (typical, VGS=10 V) | — | 2.4 ohm |
| RDS(on) (max per family datasheet) | — | 6 ohm |
| Betriebstemperaturbereich | — | -55C to +150C (per family datasheet) |
| Qualification | — | Industrial |
| Lead-Free / RoHS | — | Yes (per distributor listing) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Gate Drive Logic Level | — | Logic-level compatible |