2N7002L vs BSS123IXTSA1 Comparison
Detailed side-by-side comparison of 2N7002L by onsemi and BSS123IXTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2N7002L | BSS123IXTSA1 |
|---|---|---|
| Brand | onsemi | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.03 | $0.11 |
| Transistor Type | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) | 115 mA (Ta) | — |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | — |
| Technology | High cell density trench MOSFET | OptiMOS Small-Signal |
| Mounting Type | Surface Mount | Surface Mount |
| Package | SOT-23 (SOT-23-3) | PG-SOT-23-3 (SOT-23-3) |
| Configuration | Single FET | Single N-Channel |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| Continuous Drain Current (ID) at TA=25C | — | 190 mA |
| Power Dissipation (PD) at TA=25C | — | 500 mW |
| RDS(on) (typical, VGS=10 V) | — | 2.4 ohm |
| RDS(on) (max per family datasheet) | — | 6 ohm |
| Operating Temperature Range | — | -55C to +150C (per family datasheet) |
| Qualification | — | Industrial |
| Lead-Free / RoHS | — | Yes (per distributor listing) |
| MSL Level | — | [DATA_NEEDED: MSL rating] |
| Gate Drive Logic Level | — | Logic-level compatible |