5CSEBA4U19C8N vs 5CSEBA4U19A7N Vergleich
Detaillierter Direktvergleich von 5CSEBA4U19C8N von Intel und 5CSEBA4U19A7N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Intel
5CSEBA4U19C8N - Cyclone V SE SoC FPGA, 40K LE, Dual ARM Cortex-A9 | Intel
5CSEBA4U19C8N ✓ AktivSpezifikationsvergleich
| Parameter | 5CSEBA4U19C8N | 5CSEBA4U19A7N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $54,75 | $99,90 |
| Family | Cyclone V SE SoC FPGA | Cyclone V SE SoC FPGA |
| Logic Elements | 40K | 40 K |
| Hard Processor System | Dual ARM Cortex-A9 MPCore with CoreSight | Dual ARM Cortex-A9 MPCore with CoreSight |
| HPS Maximum Frequency | 600 MHz | — |
| FPGA Fabric Speed Grade | -8 | — |
| Gehäuse | 484-UBGA (19x19 mm) | 484-UBGA (U19), 19x19 mm, 1.0 mm pitch |
| Betriebstemperatur | 0C to +85C (commercial) | — |
| Process Technology | TSMC 28nm low-power | — |
| User I/O Count | 161 | — |
| Montageart | Surface Mount (BGA) | Surface Mount (BGA) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | 3 (168 hours) | 3 (168 hours) |
| Supply Voltage (Core) | [DATA_NEEDED: VCC core voltage] | — |
| DSP Blocks | [DATA_NEEDED: number of DSP blocks] | — |
| Embedded Memory (M10K) | [DATA_NEEDED: M10K block count] | — |
| Transceivers | None (SE variant - no high-speed transceivers) | — |
| Configuration Method | Serial (EPCS) and Parallel | — |
| Adaptive Logic Modules | — | [DATA_NEEDED: ALM count] |
| Embedded Memory | — | 3.4 Mbits (M9K) |
| DSP Blocks (18x18 Multipliers) | — | 224 |
| PLLs | — | [DATA_NEEDED: PLL count] |
| HPS Maximum Application Clock | — | 925 MHz |
| Memory Interfaces | — | DDR3, DDR3L, LPDDR2 (via HPS); soft DDR3/2 in FPGA |
| User I/O | — | 161 |
| Betriebs-Sperrschichttemperatur | — | -40C to +125C (automotive) / -40C to +100C (industrial) |
| Process Node | — | TSMC 28 nm low-power |
| Core Voltage | — | 1.1 V (typical) |