AFT26H050W26SR3 vs AFT26HW050SR3 Vergleich
Detaillierter Direktvergleich von AFT26H050W26SR3 von NXP Semiconductors und AFT26HW050SR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteSpezifikationsvergleich
| Parameter | AFT26H050W26SR3 | AFT26HW050SR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $23,95 | $47,74 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Transistortyp | N-Channel LDMOS, Enhancement Mode | — |
| Frequency Range | 2.496 GHz to 2.69 GHz | 2496 MHz to 2690 MHz |
| Average Output Power | 9 W | — |
| Test Voltage | 28 V | — |
| Test Current | 100 mA | — |
| Power Gain | 14.2 dB | — |
| Maximum Drain-Source Voltage | 65 V | — |
| Maximum Operating Temperature | 150 °C | — |
| Peak Reflow Temperature | 260 °C | — |
| Configuration | Single, Asymmetrical Doherty | — |
| Number of Elements | 1 | — |
| Technology | Metal-Oxide Semiconductor (LDMOS) | — |
| Gehäuse | NI-780S-4L4L-8 (ceramic, overmolded) | — |
| Channel Type | N-Channel | — |
| Montageart | Surface Mount / chassis-mount screw flange | Surface Mount (SMD RF Flange) |
| Supplier Device Package | NI-780S-4L4L-8 | — |
| Part Family | — | Airfast AFT26HW050S Series |
| Device Type | — | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Transistor Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Output Power (Average) | — | 9 W (Average) |
| Output Power (Peak) | — | 50 W (Peak) |
| Power Gain (Typical) | — | 14.2 dB |
| Drain Voltage (Operating) | — | 28 V |
| Quiescent Current (Test) | — | 100 mA |
| Gehäuse / Bauform | — | NI-780-4S4 (Ceramic Air-Cavity) |
| Topologie | — | Asymmetrical Doherty (Main + Peak) |
| Application Band | — | 2.6 GHz TDD-LTE / 5G NR |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Series | — | Airfast RF Power |