AFT26H050W26SR3 vs AFT26HW050SR3 Comparación
Comparación detallada lado a lado de AFT26H050W26SR3 por NXP Semiconductors y AFT26HW050SR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteComparación de especificaciones
| Parámetro | AFT26H050W26SR3 | AFT26HW050SR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $23,95 | $47,74 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Tipo de transistor | N-Channel LDMOS, Enhancement Mode | — |
| Frequency Range | 2.496 GHz to 2.69 GHz | 2496 MHz to 2690 MHz |
| Average Output Power | 9 W | — |
| Test Voltage | 28 V | — |
| Test Current | 100 mA | — |
| Power Gain | 14.2 dB | — |
| Maximum Drain-Source Voltage | 65 V | — |
| Maximum Operating Temperature | 150 °C | — |
| Peak Reflow Temperature | 260 °C | — |
| Configuration | Single, Asymmetrical Doherty | — |
| Number of Elements | 1 | — |
| Technology | Metal-Oxide Semiconductor (LDMOS) | — |
| Encapsulado | NI-780S-4L4L-8 (ceramic, overmolded) | — |
| Channel Type | N-Channel | — |
| Tipo de montaje | Surface Mount / chassis-mount screw flange | Surface Mount (SMD RF Flange) |
| Supplier Device Package | NI-780S-4L4L-8 | — |
| Part Family | — | Airfast AFT26HW050S Series |
| Device Type | — | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Transistor Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Output Power (Average) | — | 9 W (Average) |
| Output Power (Peak) | — | 50 W (Peak) |
| Power Gain (Typical) | — | 14.2 dB |
| Drain Voltage (Operating) | — | 28 V |
| Quiescent Current (Test) | — | 100 mA |
| Encapsulado / Carcasa | — | NI-780-4S4 (Ceramic Air-Cavity) |
| Topología | — | Asymmetrical Doherty (Main + Peak) |
| Application Band | — | 2.6 GHz TDD-LTE / 5G NR |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Series | — | Airfast RF Power |