AFT26H050W26SR3 vs AFT26HW050SR3 Comparação
Comparação detalhada lado a lado de AFT26H050W26SR3 por NXP Semiconductors e AFT26HW050SR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteComparação de especificações
| Parâmetro | AFT26H050W26SR3 | AFT26HW050SR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Obsolete | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $23,95 | $47,74 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Tipo de transistor | N-Channel LDMOS, Enhancement Mode | — |
| Frequency Range | 2.496 GHz to 2.69 GHz | 2496 MHz to 2690 MHz |
| Average Output Power | 9 W | — |
| Test Voltage | 28 V | — |
| Test Current | 100 mA | — |
| Power Gain | 14.2 dB | — |
| Maximum Drain-Source Voltage | 65 V | — |
| Maximum Operating Temperature | 150 °C | — |
| Peak Reflow Temperature | 260 °C | — |
| Configuration | Single, Asymmetrical Doherty | — |
| Number of Elements | 1 | — |
| Technology | Metal-Oxide Semiconductor (LDMOS) | — |
| Encapsulamento | NI-780S-4L4L-8 (ceramic, overmolded) | — |
| Channel Type | N-Channel | — |
| Tipo de montagem | Surface Mount / chassis-mount screw flange | Surface Mount (SMD RF Flange) |
| Supplier Device Package | NI-780S-4L4L-8 | — |
| Part Family | — | Airfast AFT26HW050S Series |
| Device Type | — | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Transistor Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Output Power (Average) | — | 9 W (Average) |
| Output Power (Peak) | — | 50 W (Peak) |
| Power Gain (Typical) | — | 14.2 dB |
| Drain Voltage (Operating) | — | 28 V |
| Quiescent Current (Test) | — | 100 mA |
| Encapsulamento / Caixa | — | NI-780-4S4 (Ceramic Air-Cavity) |
| Topologia | — | Asymmetrical Doherty (Main + Peak) |
| Application Band | — | 2.6 GHz TDD-LTE / 5G NR |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Series | — | Airfast RF Power |