AFT26H050W26SR3 vs AFT26HW050SR3 Comparaison
Comparaison détaillée côte à côte de AFT26H050W26SR3 par NXP Semiconductors et AFT26HW050SR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteComparaison des spécifications
| Paramètre | AFT26H050W26SR3 | AFT26HW050SR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $23,95 | $47,74 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Type de transistor | N-Channel LDMOS, Enhancement Mode | — |
| Frequency Range | 2.496 GHz to 2.69 GHz | 2496 MHz to 2690 MHz |
| Average Output Power | 9 W | — |
| Test Voltage | 28 V | — |
| Test Current | 100 mA | — |
| Power Gain | 14.2 dB | — |
| Maximum Drain-Source Voltage | 65 V | — |
| Maximum Operating Temperature | 150 °C | — |
| Peak Reflow Temperature | 260 °C | — |
| Configuration | Single, Asymmetrical Doherty | — |
| Number of Elements | 1 | — |
| Technology | Metal-Oxide Semiconductor (LDMOS) | — |
| Boîtier | NI-780S-4L4L-8 (ceramic, overmolded) | — |
| Channel Type | N-Channel | — |
| Type de montage | Surface Mount / chassis-mount screw flange | Surface Mount (SMD RF Flange) |
| Supplier Device Package | NI-780S-4L4L-8 | — |
| Part Family | — | Airfast AFT26HW050S Series |
| Device Type | — | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Transistor Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Output Power (Average) | — | 9 W (Average) |
| Output Power (Peak) | — | 50 W (Peak) |
| Power Gain (Typical) | — | 14.2 dB |
| Drain Voltage (Operating) | — | 28 V |
| Quiescent Current (Test) | — | 100 mA |
| Boîtier / Format | — | NI-780-4S4 (Ceramic Air-Cavity) |
| Topologie | — | Asymmetrical Doherty (Main + Peak) |
| Application Band | — | 2.6 GHz TDD-LTE / 5G NR |
| Statut RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Series | — | Airfast RF Power |