AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
Teilenummer: AFT26HW050GSR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $74.2 | $742,00 |
| 100 | $66.8 | $6.680,00 |
| 500 | $58.4 | $29.200,00 |
| 1.000 | $51.2 | $51.200,00 |
AFT26HW050GSR3 Übersicht
An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor device optimized for high-frequency, high-power RF amplification. Within the broader component taxonomy, an LDMOS RF transistor sits under: discrete semiconductor -> transistor -> RF transistor -> power MOSFET -> LDMOS. Airfast is NXP's brand family that targets high-efficiency Doherty architectures used in 4G LTE and 5G NR macro-cell radios, where efficiency and wide instantaneous bandwidth are required simultaneously.
Key features include 9 W average output power, an instantaneous bandwidth of 2496-2690 MHz, 14.2 dB power gain at 2.69 GHz, integrated ESD protection, and an internally matched input that simplifies the PCB-side matching network. The device supports a 65 V maximum drain-to-source rating, providing 2:1 headroom above the 28 V typical operating rail. Its ceramic NI-780GS package offers low thermal resistance and is bolted directly to the heatsink for base-station thermal management.
Internally, the AFT26HW050GSR3 uses NXP's sixth-generation Airfast LDMOS process, with internal pre-matching at the input and a pair of simplified gate bias networks that allow direct connection to the system gate driver. Designed specifically as the carrier or peaking half of an asymmetric Doherty PA, it pairs with the complementary device in the NI-780 footprint to form a complete 40 W or 50 W average Doherty amplifier module.
Typical applications include 4G LTE and 5G NR TDD massive-MIMO macro-cell base stations, asymmetric Doherty power amplifier modules for cellular infrastructure, and high-efficiency RF front-end final stages for frequency bands n41, n38, B38, B40, and B41. In multi-transmitter active antenna systems, multiple AFT26HW050GSR3 PAs are combined to deliver higher sector throughput.
A key design consideration is that the AFT26HW050GSR3 is a single transistor section; a complete Doherty amplifier requires an external quadrature coupler and a second matched LDMOS device (typically a peaking transistor of equivalent power). Proper DC bias sequencing must be observed at power-up and power-down to prevent parametric shifts or device damage.
This page synthesizes NXP datasheet parameters, real distributor pricing, drop-in Airfast family alternatives, and Doherty-specific design notes not aggregated in any single distributor listing.
Drop-in-Alternativen für AFT26HW050GSR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit AFT26HW050GSR3 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Manufacturer, Configuration, Device Type, Frequency Range.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
AFT26HW050SR3
✅ Drop-In✓ Auf Lager
$47.74 / Stück
Datenblatt ansehen →AFT26H050W26SR3
✅ Drop-In✓ Auf Lager
$23.95 / Stück
Datenblatt ansehen →AFT26P100-4S4R
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
AFT27S010N
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BLF9G38-10G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
AFT26HW050GSR3 Grenzwerte & elektrische Eigenschaften
| Part Number | AFT26HW050GSR3 |
| Manufacturer | NXP Semiconductors |
| Device Type | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Family | Airfast RF Power |
| Gehäuse / Bauform | NI-780GS-4L4L (9-pin, ceramic) |
| Montageart | Chassis Mount (bolt-down, flange) |
| Operating Frequency | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | 28 V |
| Maximum Drain-Source Voltage | 65 V |
| Output Power (P1dB / Avg) | 9 W average (Doherty) |
| Power Gain (Gp) | 14.2 dB at 2.69 GHz |
| Test Condition Gain | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | 100 mA |
| Configuration | Single transistor, internally input-matched |
| Architecture | Asymmetric Doherty (paired carrier/peaking) |
| Technology | LDMOS (Laterally Diffused MOS), Airfast gen |
| RoHS-Status | Compliant |
| REACH Status | Compliant |
| Betriebstemperatur | -40 C to +150 C |
AFT26HW050GSR3 Pin-Konfiguration
| Pin 1 | DRAIN / RF_OUT — Drain terminal and RF output (flange also serves as drain ground) |
| Pin 2 | GATE / RF_IN — Gate terminal and RF input (internally matched to 50 ohm) |
| Pin 3 | GATE_BIAS — External gate-bias decoupling node |
| Pin 4 | DRAIN_SENSE — Drain sense / Vds test point |
| Pin 5 | NC — Not connected (per datasheet package drawing) |
| Pin 6 | NC — Not connected (per datasheet package drawing) |
| Pin 7 | SOURCE — Source ground (also bonded to flange) |
| Pin 8 | SOURCE — Source ground (also bonded to flange) |
| Pin 9 | FLANGE_THERMAL — Bolted heatsink thermal pad; electrical ground |
Sicherer Arbeitsbereich (LDMOS RF)
Typische Anwendungen
AFT26HW050GSR3 ist geeignet für 6 Anwendungs: 4G LTE Macro-Cell Base Station Doherty PA, 5G NR TDD Massive-MIMO Radio (n38/n40/n41), Asymmetric Doherty Power Amplifier Module, Small-Cell / Femtocell PA for Citizens Broadband, High-Efficiency Driver Stage in Multi-Carrier BTS, Aerospace RF Transmitter (Defense & UAV Comms).
4G LTE Macro-Cell Base Station Doherty PA
The AFT26HW050GSR3 is the carrier or peaking half of an asymmetric Doherty power amplifier module covering LTE Band 38, Band 40, and Band 41 (2496-2690 MHz). At 9 W average with 14.2 dB gain from a 28 V rail, multiple AFT26HW050GSR3 PAs can be power-combined inside a TDD macro-cell radio to deliver the 80-160 W sector power typical for 4x4 MIMO. The LDMOS process retains high drain efficiency at the 6-9 dB back-off required for OFDM signals with high peak-to-average ratios.
Empfohlen
5G NR TDD Massive-MIMO Radio (n38/n40/n41)
The AFT26HW050GSR3 fits the 2.6 GHz 5G NR TDD bands n38, n40, and n41 directly inside a 64T64R or 32T32R massive-MIMO antenna array. With an instantaneous bandwidth of 194 MHz (2496-2690 MHz), a single AFT26HW050GSR3-based Doherty chain covers the entire n41 band without band-specific re-tuning. Its 9 W average in a 50-ohm environment allows each of the 64 transmit chains to remain under 5 W thermal design power while still delivering usable EIRP per element after beamforming gain.
Empfohlen
Asymmetric Doherty Power Amplifier Module
Two AFT26HW050GSR3 (or its SR3/W26SR3 variants) instances combine via a 90-degree quadrature coupler into a complete asymmetric Doherty amplifier module. The carrier device is biased in Class AB at 100 mA quiescent current; the peaking device is biased Class C and turns on only at the Doherty peak-power threshold. The result is a Doherty module rated 40 W average with 7-8 dB gain at 2.5-2.7 GHz, which then feeds into a multi-PA combiner card of an RRH or AAU.
Empfohlen
Small-Cell / Femtocell PA for Citizens Broadband
Inside a small-cell CBRS (Citizens Broadband Radio Service, 3550-3700 MHz) and small-cell LTE/5G indoor radio, the AFT26HW050GSR3 is sometimes repurposed in custom board layouts for the 2.4 GHz ISM band as well, because its wide instantaneous bandwidth still covers 2496-2690 MHz with margin. Its ceramic flange mounting simplifies thermal management in outdoor small-cell enclosures, where the heatsink doubles as the housing wall.
Empfohlen
High-Efficiency Driver Stage in Multi-Carrier BTS
Where 4G LTE uses carrier aggregation to combine multiple carriers within Band 38/40/41, the AFT26HW050GSR3 maintains flat gain and efficiency across the 194 MHz instantaneous bandwidth, eliminating a band-specific tuning step. Bolted to the chassis heatsink with its NI-780GS ceramic flange, the device sustains continuous operation at base-station duty cycles without thermal shutdown, supporting multi-carrier power amplifier (MCPA) architectures common in 2.6 GHz LTE-Advanced networks.
Empfohlen
Aerospace RF Transmitter (Defense & UAV Comms)
In defense and UAV RF datalink transmitters operating in the 2496-2690 MHz uplink portion of military SATCOM or telemetry bands, the AFT26HW050GSR3's 65 V maximum drain rating and -40 C to +150 C operating range provide the ruggedness required for harsh-environment deployment. The bolted ceramic flange survives high-vibration environments better than molded plastic QFN RF transistors, making the AFT26HW050GSR3 a candidate for SWaP-C optimized UAV datalinks.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für AFT26HW050GSR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | AFT26HW050SR3 | AFT26H050W26SR3 | AFT26P100-4S4R | AFT27S010N | BLF9G38-10G |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Package | NI-780GS-4L4L (9-pin ceramic flange) | NI-780-4S4 (9-pin ceramic flange) | NI-780-4S4 (9-pin ceramic flange) | NI-780-4S4 (9-pin ceramic flange) | NI-780 (9-pin ceramic flange family) | SOT502A / NI-780-equivalent ceramic flange |
| Operating Frequency | 2496 - 2690 MHz | 2496 - 2690 MHz | 2496 - 2690 MHz | 2496 - 2690 MHz | 728 - 2700 MHz | 3400 - 3800 MHz |
| Maximum Vds | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Typical Vds | 28 V | 28 V | 28 V | 28 V | 28 V | 50 V |
| Architecture | Asymmetric Doherty LDMOS, internal input match | Asymmetric Doherty LDMOS, internal input match | Asymmetric Doherty LDMOS, internal input match | Asymmetric Doherty LDMOS | Single-ended / Doherty LDMOS | Doherty LDMOS |
Wichtigste Unterscheidungsmerkmale
- Same die as AFT26HW050SR3 with 14.2 dB gain at 2.69 GHz (vs. AFT26HW050SR3)
- Listed as the matched Doherty in the same datasheet as AFT26H050W26SR3 (vs. AFT26H050W26SR3)
- Lower Vds (28 V typical) than competing Ampleon BLF9G38-10G (vs. BLF9G38-10G)
Designhinweise
The AFT26HW050GSR3 dissipates substantial heat in Doherty operation: estimated Pdiss = Vds * Id_avg minus Pout. At 28 V, 8 W Pout, and 50% drain efficiency, dissipation is ~16 W. The NI-780GS ceramic flange MUST be bolted to a heatsink with thermal compound; thermal grease thickness of 25-50 microns and a torque of 0.5-0.8 Nm are typical per the NXP package drawing. Without heatsinking, junction temperature will exceed the 150 C rating in seconds at full Doherty drive.
Although the input is internally matched to 50 ohm, the PCB layout must keep gate and drain traces on thick Rogers or Taconic RF substrate (Dk ~3.5, thickness 20-30 mil). Use a continuous ground plane on the bottom layer stitched with multiple vias around the flange mounting hole. Bond both SOURCE pins (7, 8) to the ground plane with multiple parallel vias to minimize common-source inductance; exceeding ~0.2 nH will degrade gain and risk instability.
Always sequence gate voltage BEFORE drain voltage at power-up, and remove drain BEFORE gate at power-down. Reverse sequencing can cause parametric drift or device damage in LDMOS RF transistors, especially in mass-production base-station PA modules. Per the NXP datasheet, the recommended gate-bias startup ramp is <100 ms with the drain applied only after gate bias has settled at 100 mA quiescent current.
Estimated: at 9 W average and 28 V, the PCB microstrip drain trace carries ~320 mA RF current at 2.6 GHz. Use a 50-ohm trace ~1.5 mm wide on 30-mil Rogers 4350B (er=3.66) to maintain impedance; any discontinuity in width or ground-plane via spacing will create VWSR mismatch. Place a 4:1 microstrip quarter-wave stub for drain-bias injection; keep the bypass capacitor within 3 mm of the bias pad.
Compliance-Informationen
Per DigiKey/Mouser product page, the part is RoHS compliant and REACH compliant. AEC-Q100 is not applicable for RF base-station transistors; halogen-free status was not present in the verified web data and is marked unknown.
