AIKB40N65DH5ATMA1 vs BSC076N04NDATMA1 Vergleich
Detaillierter Direktvergleich von AIKB40N65DH5ATMA1 von Infineon und BSC076N04NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | AIKB40N65DH5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,84 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | AIKB40N65DH5ATMA1 | — |
| Technology | TRENCHSTOP 5 (Trench + Field-Stop) | Trench MOSFET (OptiMOS 3) |
| Transistortyp | IGBT NPT (Non-Punch-Through) | — |
| Collector-Emitter Voltage (VCES) | 650 V | — |
| Continuous Collector Current (IC) at TC=100C | 40 A | — |
| Pulsed Collector Current (ICM) | 74 A | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| VCE(sat) at IC=40 A, VGE=15 V, Tj=25C | [DATA_NEEDED: VCE(sat) typical value] | — |
| Co-packaged Diode | RAPID 1 fast and soft antiparallel diode | — |
| Gehäuse | PG-TO263-3-2 (D2PAK, surface mount) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -40C to +175C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified (TRENCHSTOP 5 AUTO) | — |
| RoHS-Status | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Typical Applications | EV chargers, DC/AC converters, photovoltaic inverters, motor drives, induction cooking | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Gehäuse / Bauform | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |