AIKB40N65DH5ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of AIKB40N65DH5ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
AIKB40N65DH5ATMA1
AIKB40N65DH5ATMA1 - 650V 40A TRENCHSTOP 5 IGBT | Infineon
AIKB40N65DH5ATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | AIKB40N65DH5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.84 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | AIKB40N65DH5ATMA1 | β |
| Technology | TRENCHSTOP 5 (Trench + Field-Stop) | Trench MOSFET (OptiMOS 3) |
| Transistor Type | IGBT NPT (Non-Punch-Through) | β |
| Collector-Emitter Voltage (VCES) | 650 V | β |
| Continuous Collector Current (IC) at TC=100C | 40 A | β |
| Pulsed Collector Current (ICM) | 74 A | β |
| Gate-Emitter Voltage (VGES) | +/-20 V | β |
| VCE(sat) at IC=40 A, VGE=15 V, Tj=25C | [DATA_NEEDED: VCE(sat) typical value] | β |
| Co-packaged Diode | RAPID 1 fast and soft antiparallel diode | β |
| Package | PG-TO263-3-2 (D2PAK, surface mount) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -40C to +175C (junction) | β |
| Automotive Qualification | AEC-Q101 qualified (TRENCHSTOP 5 AUTO) | β |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Typical Applications | EV chargers, DC/AC converters, photovoltaic inverters, motor drives, induction cooking | β |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |