AIKB40N65DH5ATMA1 vs BSC076N04NDATMA1 Comparación
Comparación detallada lado a lado de AIKB40N65DH5ATMA1 por Infineon y BSC076N04NDATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | AIKB40N65DH5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,84 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | AIKB40N65DH5ATMA1 | — |
| Technology | TRENCHSTOP 5 (Trench + Field-Stop) | Trench MOSFET (OptiMOS 3) |
| Tipo de transistor | IGBT NPT (Non-Punch-Through) | — |
| Collector-Emitter Voltage (VCES) | 650 V | — |
| Continuous Collector Current (IC) at TC=100C | 40 A | — |
| Pulsed Collector Current (ICM) | 74 A | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| VCE(sat) at IC=40 A, VGE=15 V, Tj=25C | [DATA_NEEDED: VCE(sat) typical value] | — |
| Co-packaged Diode | RAPID 1 fast and soft antiparallel diode | — |
| Encapsulado | PG-TO263-3-2 (D2PAK, surface mount) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -40C to +175C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified (TRENCHSTOP 5 AUTO) | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Typical Applications | EV chargers, DC/AC converters, photovoltaic inverters, motor drives, induction cooking | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Encapsulado / Carcasa | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |