BD249C-S vs BD249C Vergleich

Detaillierter Direktvergleich von BD249C-S von Bourns und BD249C von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BD249C-S BD249C
Marke Bourns onsemi
Kategorie Transistors Transistors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,10 $1,82
Transistortyp NPN Bipolar Junction Transistor (BJT) Single Bipolar (BJT)
Kollektor-Emitter-Spannung (Vceo) 100 V 100 V
Collector-Base Voltage (VCB) 100 V —
Emitter-Base Voltage (VEB) 5 V —
Collector Current (Continuous) 25 A —
Collector Current (Peak) 40 A —
Total Power Dissipation (TC = 25 C) 125 W —
Power Derating 1.0 W/C above 25 C case temperature —
Übergangsfrequenz (ft) 3 MHz 3 MHz
DC Current Gain (hFE) [DATA_NEEDED: hFE range and test conditions] [DATA_NEEDED: hFE range]
Gehäuse SOT-93 (TO-218), 3 pins, through hole SOT-93 (through hole)
Montageart Through Hole Through Hole
Pin-Anzahl 3 —
Series Grade BD249C (C grade, highest VCEO in BD249 series) —
Complementary Device BD250 series (PNP) —
Betriebstemperatur [DATA_NEEDED: storage/operating junction temperature range] —
ESD Rating (HBM) Class 3B, > 8000 V (per onsemi BD249C family data) —
Flammability Rating UL 94 V-0 @ 0.125 in (epoxy, family data) UL 94 V-0 @ 0.125 in
RoHS-Status [DATA_NEEDED: RoHS status for BD249C-S specifically] —
Polarity — NPN
Continuous Collector Current — 25 A
Peak Collector Current — 40 A
Power Dissipation (at 25 C case) — 125 W
Complementary PNP Part — BD250 series
ESD Rating - Machine Model — > 400 V (Class C)
ESD Rating - Human Body Model — > 8000 V (Class 3B)
Lead-Free (Pb-Free) Package — Available
Operating Case Temperature — [DATA_NEEDED: operating case temperature range]

Datenblätter & Ressourcen

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