BD249C-S vs BD249C 对比

详细并排对比 BD249C-S 出自 Bourns 和 BD249C 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BD249C-S BD249C
品牌 Bourns onsemi
分类 Transistors Transistors
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.10 $1.82
晶体管类型 NPN Bipolar Junction Transistor (BJT) Single Bipolar (BJT)
集电极-发射极电压(Vceo) 100 V 100 V
Collector-Base Voltage (VCB) 100 V —
Emitter-Base Voltage (VEB) 5 V —
Collector Current (Continuous) 25 A —
Collector Current (Peak) 40 A —
Total Power Dissipation (TC = 25 C) 125 W —
Power Derating 1.0 W/C above 25 C case temperature —
过渡频率(ft) 3 MHz 3 MHz
DC Current Gain (hFE) [DATA_NEEDED: hFE range and test conditions] [DATA_NEEDED: hFE range]
封装 SOT-93 (TO-218), 3 pins, through hole SOT-93 (through hole)
安装类型 Through Hole Through Hole
引脚数量 3 —
Series Grade BD249C (C grade, highest VCEO in BD249 series) —
Complementary Device BD250 series (PNP) —
工作温度 [DATA_NEEDED: storage/operating junction temperature range] —
ESD Rating (HBM) Class 3B, > 8000 V (per onsemi BD249C family data) —
Flammability Rating UL 94 V-0 @ 0.125 in (epoxy, family data) UL 94 V-0 @ 0.125 in
RoHS 状态 [DATA_NEEDED: RoHS status for BD249C-S specifically] —
Polarity — NPN
Continuous Collector Current — 25 A
Peak Collector Current — 40 A
Power Dissipation (at 25 C case) — 125 W
Complementary PNP Part — BD250 series
ESD Rating - Machine Model — > 400 V (Class C)
ESD Rating - Human Body Model — > 8000 V (Class 3B)
Lead-Free (Pb-Free) Package — Available
Operating Case Temperature — [DATA_NEEDED: operating case temperature range]

数据手册与资源

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