BSC005N03LS5IATMA1 vs BSC12DN20NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSC005N03LS5IATMA1 von Infineon und BSC12DN20NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC005N03LS5IATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,32 | $0,61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC005N03LS5IATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS power MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at Ta | 42 A | — |
| Continuous Drain Current (ID) at Tc | 433 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max | 0.55 mΩ at VGS = 10 V, ID = 50 A | — |
| Gate-Source Threshold Voltage VGS(th) | 2 V (typ) at VGS = 10 mA | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 188 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-5 |
| Montageart | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| RoHS-Status | Compliant (per LCSC listing) | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 200V |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID, Tc) | — | 11.3 A |
| Power Dissipation (PD, Tc) | — | 50 W |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Configuration | — | Single N-channel |
| Pin-Anzahl | — | 8 |