BSC005N03LS5IATMA1 vs BSC12DN20NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC005N03LS5IATMA1 by Infineon and BSC12DN20NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC12DN20NS3GATMA1
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC005N03LS5IATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC005N03LS5IATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS power MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) at Ta | 42 A | β |
| Continuous Drain Current (ID) at Tc | 433 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) max | 0.55 mΞ© at VGS = 10 V, ID = 50 A | β |
| Gate-Source Threshold Voltage VGS(th) | 2 V (typ) at VGS = 10 mA | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 188 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-5 |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | β |
| RoHS Status | Compliant (per LCSC listing) | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Product Family | β | OptiMOS 200V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 200 V |
| Continuous Drain Current (ID, Tc) | β | 11.3 A |
| Power Dissipation (PD, Tc) | β | 50 W |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Configuration | β | Single N-channel |
| Pin Count | β | 8 |