BSC005N03LS5IATMA1 vs BSC12DN20NS3GATMA1 比較
詳細な並列比較: BSC005N03LS5IATMA1 メーカー: Infineon および BSC12DN20NS3GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ 生産中仕様比較
| パラメータ | BSC005N03LS5IATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.32 | $0.61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC005N03LS5IATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS power MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at Ta | 42 A | — |
| Continuous Drain Current (ID) at Tc | 433 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max | 0.55 mΩ at VGS = 10 V, ID = 50 A | — |
| Gate-Source Threshold Voltage VGS(th) | 2 V (typ) at VGS = 10 mA | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 188 W | — |
| 動作接合温度 | -55 °C to +175 °C | — |
| パッケージ | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-5 |
| 実装タイプ | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| RoHS ステータス | Compliant (per LCSC listing) | Compliant |
| MSLレベル | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 200V |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID, Tc) | — | 11.3 A |
| Power Dissipation (PD, Tc) | — | 50 W |
| 動作温度範囲 | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Configuration | — | Single N-channel |
| ピン数 | — | 8 |