BSC005N03LS5IATMA1 vs BSC12DN20NS3GATMA1 Comparación
Comparación detallada lado a lado de BSC005N03LS5IATMA1 por Infineon y BSC12DN20NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC005N03LS5IATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,32 | $0,61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC005N03LS5IATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS power MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at Ta | 42 A | — |
| Continuous Drain Current (ID) at Tc | 433 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max | 0.55 mΩ at VGS = 10 V, ID = 50 A | — |
| Gate-Source Threshold Voltage VGS(th) | 2 V (typ) at VGS = 10 mA | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 188 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-5 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Estado RoHS | Compliant (per LCSC listing) | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 200V |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID, Tc) | — | 11.3 A |
| Power Dissipation (PD, Tc) | — | 50 W |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Configuration | — | Single N-channel |
| Recuento de pines | — | 8 |