BSC009NE2LSATMA1 vs BSC010NE2LSIATMA1 Vergleich
Detaillierter Direktvergleich von BSC009NE2LSATMA1 von Infineon und BSC010NE2LSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC009NE2LSATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,38 | $0,92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 25V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS (Trench) |
| Drain-Source Voltage (V_DS) | 25 V | — |
| Continuous Drain Current (I_D) at T_a | 41 A | — |
| Continuous Drain Current (I_D) at T_c | 100 A (Mouser listing), 255 A pulsed (DigiKey) | — |
| Pulsed Drain Current (I_DM) | 255 A | — |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm | — |
| Power Dissipation (T_a) | 2.5 W | — |
| Power Dissipation (T_c) | 96 W | — |
| Gate Threshold Voltage V_GS(th) Typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| Betriebstemperaturbereich | -55C to +150C (TJ) | -55C to +150C (TJ) |
| Gehäuse / Bauform | PG-TDSON-8-7 (TDSON-8 FL) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | 8 |
| MSL-Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Series / Family | — | OptiMOS 25V |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Gehäuse | — | PG-TDSON-8-7 (TDSON-8 EP) |
| Configuration | — | Single N-Channel |
| Gate Drive | — | Logic-level compatible |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |