BSC009NE2LSATMA1 vs BSC010NE2LSIATMA1 对比
详细并排对比 BSC009NE2LSATMA1 出自 Infineon 和 BSC010NE2LSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC009NE2LSATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.38 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 25V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS (Trench) |
| Drain-Source Voltage (V_DS) | 25 V | — |
| Continuous Drain Current (I_D) at T_a | 41 A | — |
| Continuous Drain Current (I_D) at T_c | 100 A (Mouser listing), 255 A pulsed (DigiKey) | — |
| Pulsed Drain Current (I_DM) | 255 A | — |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm | — |
| Power Dissipation (T_a) | 2.5 W | — |
| Power Dissipation (T_c) | 96 W | — |
| Gate Threshold Voltage V_GS(th) Typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| 工作温度范围 | -55C to +150C (TJ) | -55C to +150C (TJ) |
| 封装 / 外壳 | PG-TDSON-8-7 (TDSON-8 FL) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 8 | 8 |
| MSL 等级 | 1 | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Series / Family | — | OptiMOS 25V |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| 封装 | — | PG-TDSON-8-7 (TDSON-8 EP) |
| Configuration | — | Single N-Channel |
| Gate Drive | — | Logic-level compatible |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |