BSC014N04LSATMA1 vs BSC018N04LSGATMA1 Vergleich
Detaillierter Direktvergleich von BSC014N04LSATMA1 von Infineon und BSC018N04LSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC014N04LSATMA1 | BSC018N04LSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $0,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 3 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Betriebstemperaturbereich | -55C to +175C | -55°C to +150°C (TJ) |
| Gehäuse | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | MOSFET (Metal Oxide) |
| RoHS-Status | Compliant | Compliant (Pb-free plating) |
| MSL-Level | 1 (unlimited) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ TC=25°C | — | 100 A |
| Continuous Drain Current (ID) @ TA=25°C | — | 30 A |
| Power Dissipation (PD) @ TC=25°C | — | 125 W |
| Power Dissipation (PD) @ TA=25°C | — | 2.5 W |
| RDS(on) Max @ VGS=10 V | — | 1.8 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 4.5 V, 10 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Tested | — | 100% (per datasheet) |
| JEDEC Qualification | — | Yes (qualified per JEDEC for target applications) |