BSC019N04LSTATMA1 vs BSC074N15NS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC019N04LSTATMA1 von Infineon und BSC074N15NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC019N04LSTATMA1 | BSC074N15NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,21 | $1,45 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS™ 5 trench |
| Drain-Source Voltage (VDS) | 40 V | 150 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A | — |
| Continuous Drain Current (ID, Ta=25C) | 28 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | 7.4 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge Qg typ | 85 nC | — |
| Power Dissipation PD (Tc=25C) | 94 W | — |
| Betriebstemperaturbereich | -55 C to +150 C | [DATA_NEEDED: TJ min/max] |
| Gehäuse | TDSON-8 (SuperSO8) 5x6 mm | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | Yes | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 114 A |
| Power Dissition (PD) at TC=25°C | — | 214 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Body Diode | — | Integrated |