BSC019N04LSTATMA1 vs BSC074N15NS5ATMA1 对比

详细并排对比 BSC019N04LSTATMA1 出自 Infineon 和 BSC074N15NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ 量产中
Infineon
BSC074N15NS5ATMA1 BSC074N15NS5ATMA1 - 150V 7.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC074N15NS5ATMA1 - 150V 7.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC074N15NS5ATMA1 ✓ 量产中

规格对比

参数 BSC019N04LSTATMA1 BSC074N15NS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.21 $1.45
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS™ 5 trench
Drain-Source Voltage (VDS) 40 V 150 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm 7.4 mΩ
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V [DATA_NEEDED: VGS(th) typ]
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
工作温度范围 -55 C to +150 C [DATA_NEEDED: TJ min/max]
封装 TDSON-8 (SuperSO8) 5x6 mm SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25°C — 114 A
Power Dissition (PD) at TC=25°C — 214 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Body Diode — Integrated

数据手册与资源

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