BSC019N04LSTATMA1 vs BSG0813NDIATMA1 Vergleich

Detaillierter Direktvergleich von BSC019N04LSTATMA1 von Infineon und BSG0813NDIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC019N04LSTATMA1 BSG0813NDIATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,21 $1,05
Technology OptiMOS 5 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) 40 V 25 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V —
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
Betriebstemperaturbereich -55 C to +150 C [DATA_NEEDED: operating temperature range]
Gehäuse TDSON-8 (SuperSO8) 5x6 mm PG-TISON-8 (5.0 x 6.0 mm)
Montageart Surface Mount Surface Mount
MSL-Level 1 (unlimited) 1 (per JEDEC J-STD-020)
RoHS-Status Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 5 Power Block
FET Type — N-Channel MOSFET Array (half-bridge / synchronous buck)
Configuration — High-side + Low-side, integrated
Low-Side Continuous Drain Current (ID) — 19 A
High-Side Continuous Drain Current (ID) — 33 A
Power Dissipation (PD) — 2.5 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
RDS(on) - Low-Side — [DATA_NEEDED: RDS(on) low-side @ VGS]
RDS(on) - High-Side — [DATA_NEEDED: RDS(on) high-side @ VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Technology Generation — OptiMOS 5
Topologie — Synchronous buck half-bridge

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