BSC019N04LSTATMA1 vs BSG0813NDIATMA1 비교
다음의 상세 나란히 비교: BSC019N04LSTATMA1 제조: Infineon 및 BSG0813NDIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC019N04LSTATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.21 | $1.05 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A | — |
| Continuous Drain Current (ID, Ta=25C) | 28 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | — |
| Total Gate Charge Qg typ | 85 nC | — |
| Power Dissipation PD (Tc=25C) | 94 W | — |
| 동작 온도 범위 | -55 C to +150 C | [DATA_NEEDED: operating temperature range] |
| 패키지 | TDSON-8 (SuperSO8) 5x6 mm | PG-TISON-8 (5.0 x 6.0 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Power Block |
| FET Type | — | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Configuration | — | High-side + Low-side, integrated |
| Low-Side Continuous Drain Current (ID) | — | 19 A |
| High-Side Continuous Drain Current (ID) | — | 33 A |
| Power Dissipation (PD) | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| RDS(on) - Low-Side | — | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | — | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Technology Generation | — | OptiMOS 5 |
| 토폴로지 | — | Synchronous buck half-bridge |