BSC019N04LSTATMA1 vs BSG0813NDIATMA1 Comparison

Detailed side-by-side comparison of BSC019N04LSTATMA1 by Infineon and BSG0813NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC019N04LSTATMA1 BSG0813NDIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 5 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) 40 V 25 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V —
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
Operating Temperature Range -55 C to +150 C [DATA_NEEDED: operating temperature range]
Package TDSON-8 (SuperSO8) 5x6 mm PG-TISON-8 (5.0 x 6.0 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 5 Power Block
FET Type — N-Channel MOSFET Array (half-bridge / synchronous buck)
Configuration — High-side + Low-side, integrated
Low-Side Continuous Drain Current (ID) — 19 A
High-Side Continuous Drain Current (ID) — 33 A
Power Dissipation (PD) — 2.5 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
RDS(on) - Low-Side — [DATA_NEEDED: RDS(on) low-side @ VGS]
RDS(on) - High-Side — [DATA_NEEDED: RDS(on) high-side @ VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Technology Generation — OptiMOS 5
Topology — Synchronous buck half-bridge

Datasheets & Resources

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