BSC034N06NSATMA1 vs BSC0911NDATMA1 Vergleich
Detaillierter Direktvergleich von BSC034N06NSATMA1 von Infineon und BSC0911NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC034N06NSATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,46 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 30 A |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 74 W | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Technology | OptiMOS 5 | OptiMOS trench MOSFET |
| Gehäuse | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TISON-8 (8-PowerTDFN) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 25V |
| Configuration | — | Dual N-Channel (2 N-CH) |
| Continuous Drain Current (ID) | — | 18 A |
| Power Dissipation (PD) | — | 1 W |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Channel Type | — | N-Channel Enhancement Mode |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) at 10V VGS] |