BSC034N06NSATMA1 vs BSC0911NDATMA1 Сравнение
Подробное сравнение бок о бок BSC034N06NSATMA1 от Infineon и BSC0911NDATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSC034N06NSATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,65 | $0,46 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 30 A |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 74 W | — |
| Диапазон рабочих температур | -55C to +150C | — |
| Technology | OptiMOS 5 | OptiMOS trench MOSFET |
| Корпус | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TISON-8 (8-PowerTDFN) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Статус RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 25V |
| Configuration | — | Dual N-Channel (2 N-CH) |
| Continuous Drain Current (ID) | — | 18 A |
| Power Dissipation (PD) | — | 1 W |
| Рабочая температура | — | -55C to +150C (junction) |
| Channel Type | — | N-Channel Enhancement Mode |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) at 10V VGS] |