BSC035N04LSGATMA1 vs BSC030N03MSGATMA1 Vergleich
Detaillierter Direktvergleich von BSC035N04LSGATMA1 von Infineon und BSC030N03MSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC035N04LSGATMA1 | BSC030N03MSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 3M |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | 100 A |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| RDS(on) Max at VGS=10V | 3.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (Pd) at Ta=25°C | 2.5 W | — |
| Power Dissipation (Pd) at Tc=25°C | 69 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | -55°C to +150°C |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | PG-TDSON-8-1 (8-pin, exposed drain pad) | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Technology | — | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Drain-Source On-Resistance (RDS(on)) | — | 3.0 mΩ (typical at VGS=10V) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc=25°C | — | 69 W |
| Drive Voltage (Min/Max RDS(on)) | — | 4.5V / 10V |
| Status | — | Active |