BSC0502NSIATMA1 vs BSO220N03MDGXUMA1 Vergleich

Detaillierter Direktvergleich von BSC0502NSIATMA1 von Infineon und BSO220N03MDGXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 - 30V Dual N-Ch MOSFET 7.7A | Infineon

BSO220N03MDGXUMA1 - 30V Dual N-Ch MOSFET 7.7A | Infineon

BSO220N03MDGXUMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter BSC0502NSIATMA1 BSO220N03MDGXUMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,85 $0,24
FET Type N-Channel —
Technology OptiMOS 5 (Trench MOSFET) OptiMOS™ 3M (Trench MOSFET)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC 100 A —
Continuous Drain Current (ID) at TA 26 A —
RDS(on) Max at VGS=10V 2.3 mOhm —
Gate Charge QG (0V to 4.5V) Typ 9.0 nC —
Output Charge QOSS Typ 13.5 nC —
Power Dissipation at TA (Ta=25C) 2.5 W —
Power Dissipation at TC (Tc=25C) 43 W —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Betriebstemperaturbereich -55C to +150C -55C to +150C (junction)
Gehäuse PG-TDSON-8 (SuperSO8 5x6) PG-DSO-8 (SO-8 with exposed pad)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS™ 3M
Configuration — Dual N-Channel (2N-CH), independent
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D) — 7.7 A
On-State Resistance (R_DS(on)) — 22 mΩ max @ V_GS=10V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min/max]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G nC]
Power Dissipation (P_D) — 1.4 W
MSL-Level — 1 (unlimited)
Avalanche Rated — Yes

Datenblätter & Ressourcen

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