BSC0502NSIATMA1 vs BSO220N03MDGXUMA1 对比
详细并排对比 BSC0502NSIATMA1 出自 Infineon 和 BSO220N03MDGXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC0502NSIATMA1 | BSO220N03MDGXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.85 | $0.24 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS™ 3M (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Continuous Drain Current (ID) at TA | 26 A | — |
| RDS(on) Max at VGS=10V | 2.3 mOhm | — |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | — |
| Output Charge QOSS Typ | 13.5 nC | — |
| Power Dissipation at TA (Ta=25C) | 2.5 W | — |
| Power Dissipation at TC (Tc=25C) | 43 W | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| 工作温度范围 | -55C to +150C | -55C to +150C (junction) |
| 封装 | PG-TDSON-8 (SuperSO8 5x6) | PG-DSO-8 (SO-8 with exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 3M |
| Configuration | — | Dual N-Channel (2N-CH), independent |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D) | — | 7.7 A |
| On-State Resistance (R_DS(on)) | — | 22 mΩ max @ V_GS=10V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G nC] |
| Power Dissipation (P_D) | — | 1.4 W |
| MSL 等级 | — | 1 (unlimited) |
| Avalanche Rated | — | Yes |