BSC093N15NS5ATMA1 vs BSZ110N08NS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC093N15NS5ATMA1 von Infineon und BSZ110N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC093N15NS5ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,83 | $0,44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | OptiMOS 5 N-Channel Power MOSFET |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at TC | 87 A | — |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΩ | — |
| Power Dissipation (PD) at TC | 139 W | — |
| Gehäuse | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Montageart | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Halogenfrei | [DATA_NEEDED: halogen free status] | — |
| Part Family | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 40 A |
| On-Resistance RDS(on) max | — | 11 mΩ |
| Power Dissipation (PD) at Tc | — | 50 W |
| Polarity | — | N-Channel |
| Configuration | — | Single MOSFET |
| Gate Drive Voltage (VGS) | — | [DATA_NEEDED: VGS rating] |