BSD235CH6327XTSA1 vs BSP316PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSD235CH6327XTSA1 von Infineon und BSP316PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSD235CH6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,12 | $0,21 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | -100 V |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | SIPMOS (P-channel MOSFET) |
| Betriebstemperaturbereich | -55 °C to +150 °C (junction) | -55 C to +150 C (junction) |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | Enhancement |
| RoHS-Status | Compliant (lead-free) | Compliant |
| MSL-Level | 1 | 1 |
| Pin-Anzahl | 6 | — |
| FET Type | — | P-Channel |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Gehäuse | — | PG-SOT223-4 (TO-261-4) |
| Anzahl der Pins | — | 3 + thermal tab |
| Packaging | — | Tape & Reel (H6327 suffix) |