BSD235CH6327XTSA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ Active
Specification Comparison
| Parameter | BSD235CH6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | -100 V |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | SIPMOS (P-channel MOSFET) |
| Operating Temperature Range | -55 °C to +150 °C (junction) | -55 C to +150 C (junction) |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | Enhancement |
| RoHS Status | Compliant (lead-free) | Compliant |
| MSL Level | 1 | 1 |
| Pin Count | 6 | — |
| FET Type | — | P-Channel |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Package | — | PG-SOT223-4 (TO-261-4) |
| Number of Pins | — | 3 + thermal tab |
| Packaging | — | Tape & Reel (H6327 suffix) |