BSD235CH6327XTSA1 vs BSP316PH6327XTSA1 Comparison

Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSD235CH6327XTSA1

BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOSβ„’

BSD235CH6327XTSA1 βœ“ Active
Infineon
BSP316PH6327XTSA1 BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSD235CH6327XTSA1 BSP316PH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.12 $0.21
Manufacturer Infineon Technologies β€”
Part Family OptiMOSβ„’ β€”
Configuration N+P complementary dual MOSFET β€”
Drain-to-Source Voltage (VDS) 20 V -100 V
N-Channel Continuous Drain Current (ID) 950 mA β€”
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) β€”
Total Power Dissipation (Ptot) 500 mW β€”
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) β€”
Mounting Type Surface Mount Surface Mount
Technology OptiMOSβ„’ low-voltage SIPMOS (P-channel MOSFET)
Operating Temperature Range -55 Β°C to +150 Β°C (junction) -55 C to +150 C (junction)
Polarity N-channel + P-channel β€”
Channel Mode Enhancement Enhancement
RoHS Status Compliant (lead-free) Compliant
MSL Level 1 1
Pin Count 6 β€”
FET Type β€” P-Channel
Continuous Drain Current (ID) at TA=25C β€” -680 mA
Total Power Dissipation (Ptot) at TA=25C β€” 1.8 W
On-Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Package β€” PG-SOT223-4 (TO-261-4)
Number of Pins β€” 3 + thermal tab
Packaging β€” Tape & Reel (H6327 suffix)

Datasheets & Resources

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