BSL308CH6327XTSA1 vs BSP129H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSL308CH6327XTSA1 von Infineon und BSP129H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
BSP129H6327XTSA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSL308CH6327XTSA1 | BSP129H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,30 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ low-voltage power MOSFETs | — |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | — |
| Gehäuse | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223, 3+Tab) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | — |
| Input Capacitance (Ciss) | 18 pF | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogenfrei | Yes (per Infineon product family convention) | — |
| FET Type | — | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | — | 240 V |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| On-Resistance RDS(on) max | — | 4.2 ohm (some sources 6 ohm) |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| Betriebstemperatur | — | -55 C to +150 C (junction) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage VGS(off) | — | [DATA_NEEDED: depletion threshold VGS(off)] |
| dv/dt Ruggedness | — | Yes (rated) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Process Technology | — | SIPMOS (vertical DMOS) |
| Drain Terminal | — | Tab (pin 4) |